3V FM Transmitter 88MHz to 108MHz by BF982
The important part of the circuit is formed of the Colpitts type oscillator. C3,C4,C5,C6,CD1-CD2 and L1 determines the frequency. BF982 and dual gate MOSFET are active parts in oscillator. When the input impedance of the MOSFET gate inputs are high, LC tank is not affected. However transistors force the LC tank and cause phase shift.
Two driver stages are added to isolate the antenna from oscillator. First stage (BF199) ampifies the low signal of the oscillator and works as a constant load. The second stage (BFR90) amplifies the signal going through the antenna some more. A short copper wire can be used as an antenna here. Attaching a large antenna to this circuit is unnecessary because the output power is low.
Read More Source:
http://www.circuit-projects.com/
3v-fm-transmitter-for-short-distance-88mhz-to-108mhz.html
Thank you.
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Linear FM 30Watt with BLY89
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Manufacture: Soulis Papanastasiou |
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Copyright: Technical Election |
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Cost of manufacture: 52,80 |
A amplifier of medium force RF for the FM, is always essential for the amateur that wants it strengthens some small transmitter, that likely it has already it manufactured! The present circuit can give force 25-30W, with control no bigger than 4-5 W.
As it appears in the analytic drawing, the amplifier is manufactured with the transistor TR1 of type LY89 of Phillips. The transistor this is specifically drawn for operation in frequencies up to 175Mhz, with very good results. His special characteristics appear below:
| Tendency of operation: 18V |
| Current of Collector: max 3 5th |
| Gain: max 10dB |
| Force of Expense: 25-30 W |
| Output (order C): > 60% |
Variable capacitors C1, C2, with inductor L1, constitute the coordinated circuit that adapts the exit of our transmitter in this amplifier RF. the circuit has been calculated suitably, so that it covers all band the FM with the biggest possible output. Inductor RFC1 polarize the transistor, so as to it works in order C that is to say with the biggest output. Inductor L2 in the collector of TR1, constitutes the charge of amplifier, while RFC2 prevents the RF signals escape in the line of catering. Capacitor C2 and resistance R1, protect the circuit from auto polarize.
The coordinated circuit of expense that is constituted by inductor L2 and variable capacitors C3, C4, adapts the exit of amplifier RF with the next stage that can be some amplifier RF of high force (> 100W) or a aerial.
MANUFACTURE
The manufacture of amplifier is very simple and easy. Puncture the point PCB that will pass the nutshell of TR1. Stick the capacitors, variable, the resistance, the RF tsok and the inductors. Finally you stick the TR1, being careful not overheats at the welding and blend pin his. Clean finally PCB from the residues of soldering. Make a very careful control for by any chance errors, omissions, short-circuits, chills you stick also anything other that could you make wonder why does not work the amplifier.
PARTS
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C1, C2, C3, C4 = 10 -80pF |
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C 5 = 10nF |
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C6 = 1000pF |
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C7 = 100nF |
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C8 = 2200mF/35V |
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L1 = 1 coil with diameter of 10 mms, 1 mm |
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L2 = 7 coils with diameter of 10 mms, 0,8 mm |
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L3 = 3 coils with diameter of 10 mms, 1 mm |
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TR1 = BLY89 |
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RFC = RF tsok |
If all they are it includes, you connect the exit of your transmitter (3-4W) in the entry of amplifier. The exit of amplifier him you will connect in some charge (dummy load) or in the aerial, through a bridge stagnant. Be supplied with tendency 11-15V your amplifier. (Power supply it should it provides current 45th). Regulate the 4 variable (C1-C4, until you take the biggest force of expense. The amplifier is ready.
Source :: http://www.electronics-lab.com/projects/rf/010/index.html
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60W RF Linear amplifier
The 60 Watt linear amplifier is simple all solid state circuit using power mosfet IRF840. The IRF series of power transistors are available in various voltage and power ratings. A single IRF840 can handle maximum power output of 125 watts. Since these transistors are used in inverters and smps they are easily available for around Rs: 20/-.
The IRF linear amplifier can be connected to the out put of popular VWN-QRP to get an output of 60 Watts. The circuit draws 700 ma at 60 Volt Vcc. Good heat sink is a must for the power transistor.
Alignment of the circuit is very easy. Connect a dummy load to the out put of the circuit. You can use some small bulb like 24V 6Watts as the dummy load. I have even used 230V 60Watts bulb as dummy load with my IRF840 power amplifier working at 120Volts. Adjust the 10K preset to get around 100 ma Drain current. I used gate voltage of 0.8V with my linear amplifier. A heigh gate voltage can make the power transistor get distroyed by self oscillation. So gate voltage must be below 2V and fixing at 1V will be safe.
Bifalar transformaer T1 is wound with 8 turns 26SWG on 1.4 x 1 balun core.
The coil on the drain of IRF is 3 turns 20 SWG wound on 4 number of T13.9 torroids (two torroids are stacked to form a balun core). The RFC at the Vcc line is 20 Turns 20 SWG wound on T20 torroid.
Copy from : http://www.electronics-lab.com/projects/rf/027/index.html
Thank you.
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