Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. • VDSS = 100V • RDS(on) = 26.5mOhm • ID = 36A. Read more
This entry was posted on Sunday, December 25th, 2011 at 6:54 amand is filed under Electronic products
